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High-voltage IGBT modules
Blocking voltage between 1700 and 6500
High-voltage IGBT modules (HVIGBT) are essential components in power electronics applications, especially where high voltages and currents need to be controlled. These modules cover a wide range of reverse voltages from 1700 to 6500 volts and offer rated currents between 200 and 2400 amperes, depending on the version. Particularly noteworthy is the X series, which includes half-bridge modules with reverse voltages of up to 6500 volts and currents of up to 1200 amps. These modules use the latest 7th generation IGBT chips, which are housed in a compact 100 x 140 x 40 mm housing with an aluminum baseplate.
The design of the high-voltage IGBT modules is characterized by maximum reliability and robustness. Optimized materials and manufacturing processes ensure improved current exchange capability, which significantly increases the longevity and load capacity of the modules. This is complemented by the strictest quality controls, which include both static and dynamic switching tests to ensure consistently high performance.
A special feature of the 1.7 kV HVIGBT modules is the use of Light Punch Through Carrier Stored Trench Gate Bipolar Transistor (ÖPT-CSTBT™) technology in combination with a new freewheeling diode design. This combination enables significantly reduced IGBT switching losses and minimizes diode oscillations at the same time - a clear advantage for efficient and low-noise operation in demanding applications. HVIGBT and HVDIODE modules are therefore perfectly matched and offer a flexible solution for multilevel inverters and other high-voltage applications.
- Highest Reliability in Material and Processes: Improvement of power cycling capability
- High robust design
- Highest Quality Contols: Static and switching test
- 100% shipping inspection
- HVIGBT and HVDIODE modules are available in rated volatages of 1,7kV, 2,5kV, 3,3kV, 4,5kV, 6,5kV and rated currents ranging from 200A to 2400A
- 1,7kV HVIGBT modules with Light Punch Through Carrier Stored Trench Gate Bipolar Transistor (ÖPT-CSTBT(TM) technology and a new free-wheel diode design for reduced IGBT losses and suooressed diode oscillation
- 3,3kV, 4,5kV, 6,5kV HVIGBT modules and diodes with 10,2kV isolated package available
- New 3,3kV, 4,5kV, 6,5kV R-series IGBT Modules
- Increased rated current and low loss performance
- Increased rated torque capability to 22Nm
- 10,2kV high isolation package available on request
- Extended operating temperature and minimum storage temperature up to 150°C and -55°C respectively
- High Robustness (Wide SOA)
- New 1,7kV 1200A Dual Hybrid SiC Module
- New 6th Generation IGBT chip, CSTB(TM) (III)
- Extended maximum operation temperature and minimum storage temperature up to 150°C and -50°C respectively
- SiC Schottky-Barrier Diode
Mitsubishi Electric is the technology leader in the field of IGBT modules - now in their 7th generation - and Intelligent Power Modules (IPM). The compact design offers significant advantages, especially for harsh environmental conditions such as in drive technology.
