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The NX housings for IGBT modules set standards in power electronics thanks to their compact design and high efficiency. With reverse voltages of 1200 V and 1700 V, they are suitable for a wide range of industrial applications. Despite their high performance, the modules are only 17 mm high, which makes them particularly space-saving and opens up new possibilities in the design of compact systems.
The modules are available in various configurations such as dual, six and seven-pack, allowing them to be used flexibly in a wide variety of circuit designs. At the heart of the NX modules is the 6th generation IGBT technology with CSTBT (Carrier Stored Trench Bipolar Transistor) chips, which ensure high switching performance with reduced power loss.
Another technical highlight is the optional auxiliary C-terminal on the N-side of the IGBT, which enables improved control. The integrated AlN insulation substrate (aluminum nitride) ensures an optimal thermal connection, which guarantees a very good thermal transition and thus significantly improves heat dissipation.
Thanks to the combination of low forward voltage, reduced noise and an overall improved figure of merit (FOM), the NX modules offer excellent energy efficiency and reliability - ideal for demanding applications where performance, compactness and operational reliability are equally important.