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T-Serie - 7. Generation

7th generation IGBT modules in 17 mm NX housing and 62 mm standard housing

The T-series IGBT modules incorporate improvements to the IGBT chip as well as new technologies for the internal module and package design. Thus, a module series is available in which the power dissipation could be further reduced and at the same time the power cycling and thermal cycling capability was improved. Both lead to higher robustness and longevity of the modules. The modules are available in two package variants

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  • 7th generation IGBT chips
  • Auxiliary C-terminal available for n-side IGBT
  • Very good thermal transition thanks to thick metal substrates (TMS)
  • 4 kV rms insulation voltage
  • Ready to install with new type of thermal paste, which is solid on delivery and melts at 45°C after installation and commissioning
  • For 1200 V modules: V(CEsat) (chip) = 1.7 V (typ) @ T(j) = 25°C; large SOA @ V(cc) = 850 V
  • For 1700 V modules: V(CEsat) (chip) = 2.1 V (typ) @ T(j) = 25°C; large SOA @ V(cc) = 1200 V
  • More than 10 µs short-circuit resistance and very good behaviour with parallel connection
  • Up to 600 A switching current in 62 mm standard housing
  • New freewheeling diode chip with optimized trade-off between V(F) and E(rr)
  • Tj(max) = 175°C
  • Reduced power loss
  • Reduced noise
  • Low forward voltage
  • Faster switching times
  • Only 17 mm height (new industry standard) or standard 62 mm
  • Improved Figure Of Merit (FOM)

Mitsubishi Electric is the technology leader in the field of IGBT modules - now in their 7th generation - and Intelligent Power Modules (IPM). The compact design offers significant advantages, especially for harsh environmental conditions such as in drive technology.



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