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2SC0435T2H0-17
Dual-Channel SCALE-2 Driver Core
The 2SC0435T drives all common high-power IGBT modules up to 1700V. It offers broad applicability thanks to its compactness and cost effectiveness, especially for solar/wind applications.
2SC0435T is a new, low-cost SCALE-2 dual-driver core that combines compact design and high reliability with broad applicability. The 2SC0435T drives all common IGBT modules up to 3600 A / 1700 V. Embedded-paralleling allows simple inverter design even at higher power ratings. Multi-level topologies are also supported
Advantages of the Technology
The 2SC0435T is one of the most compact driver core available for industrial applications, with a footprint of only 57.2 x 51.6 mm and profile of 20 mm. The SCALE-2 chipset reduces the component count by up to 85% compared to conventional solutions, thus significantly increasing reliability and reducing costs. The 2SC0435T combines a complete two-channel driver core with all components required for driving, including: isolated DC/DC converter; short-circuit protection; as well as supply voltage monitoring. Each of the two output channels is electrically-isolated from the primary side and the other secondary channel.
IGBT Mode
An output current of 35 A and 4 W drive power is available per channel, making the 2SC0435T a suitable driver choice for both high-power modules and parallel-connected IGBT modules. In dedicated IGBT mode, the driver provides a gate voltage swing of +15 V / –10V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level. Excellent EMC performance allows safe and reliable operation in even harsh industrial environments. The 2SC0435T is suited for high-power IGBTs with blocking voltages up to 1700 V.
MOSFET Mode
A dedicated MOSFET mode is implemented in the 2SC0435T. It allows any gate voltage swing of +10 V…+20 V / 0 V to make the most of the driver’s 100 kHz switching speed. With its high output power, very short delay, and extremely small jitter, the 2SC0435T driver core has been specifically designed for high-power and ultra-fast switching, fully exploiting the capabilities of state-of-the-art MOS power devices.
Driving Parallel-Connected IGBTs
The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new, pioneering concept makes it practical for the first time to build converter series with discrete modules as well as parallel-connected IGBTs without any significant additional development effort.
- Blocking voltages up to 1700V
- Switching frequency up to 100kHz
- Very short delay time of <100ns
- Small jitter of ±3ns
- Gate current ±35A
- +15V (regulated)/-10V gate driving
- Interface for 3.3V...15V logic level
- Direct and half-bridge modes
- Embedded paralleling capability
- 2-level and multilevel topologies
- IGBT short-circuit protection
- Advanced Active Clamping
- Isolated DC/DC converter
- 2 x 4W output power
- Supply under-voltage lockout
- Safe isolation to EN50178
- UL recognized: under UL 508C NMMS2/8
- and under UL 60950-1 NWGQ2/8
- RoHS versions available
- Superior EMC
- Reliable, long service life
- Footprint: 57.2mm x 51.6mm
Power Integrations offers highly integrated IGBT drivers. Based on decades of experience, ASICs have been developed for the driver and monitoring functions, which together with the inductive transformers form the core of the drivers. Extensive application design support is offered.
Highly integrated driver components: cheaper than discrete in-house development
MOSFETs and IGBTs are convenient to drive with low power, unlike bipolar power semiconductors. However, high gate capacitances must be recharged and, in the case of stacked IGBTs for HVDC (high-voltage DC transmission), large potential differences must also be bridged. In addition, there are protection functions for the power semiconductors and a negative bias voltage for IGBTs to be blocked so that they cannot switch through and fail as a result of transients in bridge circuits.
In view of the high voltages, some know-how is required here. For example, special regulations on insulation clearances, clearances and creepage distances, and partial discharge resistance must be observed, and these must also be checked with expensive measuring equipment. Likewise, the degradation of the board substrate and the migration of metal ions in it must be taken into account, which can otherwise lead to premature short circuits and total failures.
Instead of launching costly in-house developments, it makes sense here to use proven, safe driver modules designed using in-house developed, monolithic highly integrated semiconductor components as well as proprietary planar transformers, such as those offered by Power Integrations under the name SCALE (which stands for Scaleable, Compact, All-purpose, Low-cost and Easy-to-use). Power Integrations, previously CONCEPT, has been developing IGBT driver solutions for over 30 years and therefore has unrivaled experience with this topic.
The SCALE devices are driven with standard logic levels from 3.3 to 15 V and are very economical in the IGBT field: they are cheaper and more reliable than conventional discrete circuit designs, especially when it comes to driving high-voltage IGBTs. Thus HY-LINE Power Components offers you everything around inverters and high performance DC/DC converters from one source.
Power Integrations offers both general modules, the SCALE Driver Cores, and modules adapted to specific IGBT modules, the SCALE Plug-and-Play Drivers. In addition, there are the monolithically integrated SCALE iDriver chips.
Base Boards 2BB0435T
Plug-and-play solution for 2SC0435T driver cores and high-voltage measurements Fast and efficient development of a customized plug-and-play design based on driver core and CONCEPT application know-how.
