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TP65H035G4WSQA
650V, 35 mOhm, TO-247
· JEDEC qualifiziert
· schnelles Schalten durch hohe Elektronenbeweglichkeit
· höherer Wirkungsgrad: bis zu 50% geringere Verluste
· Einfache Ansteuerung mit Std-MOSFET Treiber. Schutz des Gates durch Spannungsreserve des GaN-FET
· höchste Zuverlässigkeit
· robust: hohe Transienten-Überspannungsfestigkeit
· ideal für Totem-Pole PFC
· sehr niedrige Qrr (Reverse Recovery Charge)
Vds min:
650 V
Rds(on)eff typ:
35 mOhm
Rds(on)eff max:
41 mOhm
Id (25°C) max:
47,2 A
Id (100°C) max:
33,4 A
Qrr typ:
150 nC
Qg typ:
22 nC
Gehäuse:
TO-247
Tab config:
Source
Tcase:
-55...+175°C
Herstellerzertifizierung:
JEDEC
The expert in GaN semiconductors and especially GaN FET switches. This new technology is particularly suitable for high switching frequencies. It offers significantly lower losses and thus enables more compact devices and better efficiencies.
- Developers have over 300 man-years of experience with GaN for RF and LED applications since 2000, over 340 own patents
- Leader in GaN switches with reverse voltages of 650 V and above
- Extensive portfolio; > 12 billion operating hours and < 1 failure per billion hours in the field
- First JEDEC and AEC-Q101 qualified 650 V devices available on the market
- Own GaN wafer fab
For all Transphorm products there is:
- Application support
- SPICE models
- Development kits
