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MOSFET Modules
3-phase full-bridge modules up to 150V / 300A
The 3-phase full-bridge modules on offer are based on modern MOSFET technology and are available with reverse voltages of 75 V, 100 V or 150 V and optional currents of 100 A, 200 A or 300 A. They therefore cover a wide range of applications and at the same time offer a high degree of flexibility in system design.
Thanks to the advanced 0.35 μm trench gate MOSFET chip technology, the modules are characterized by particularly low VDS(ON) and VSD values, which leads to low conduction losses and thus to an overall higher efficiency. The integrated avalanche capability ensures reliable operation both when switching off and during the recovery phase, even under demanding conditions.
For easy integration, the modules are equipped with control connections for standard plugs. They also have a built-in NTC thermal sensor for temperature monitoring, which further increases operational reliability. The combination of modern semiconductor technology, high reliability and user-friendly features makes these MOSFET modules an excellent solution for compact and powerful systems.
- Low V DS(ON) and Low VSD
- Advanced 0.35μm trench gate MOSFET chip technology
- R DS(ON) = 0.8m Ω (FM400TU-07A @ 25°C)
- Operation without snubber circuit possible
- Avalanche capability is guaranteed at turn-off & recovery
- Control terminals for standard connector
- Inbuilt Thermal sensor (NTC)
- High reliability
- 100A (rms), 200A(rms) , 300A(rms) available in 75V, 100V and 150V in a 6 in 1 compact package
Mitsubishi Electric is the technology leader in the field of IGBT modules - now in their 7th generation - and Intelligent Power Modules (IPM). The compact design offers significant advantages, especially for harsh environmental conditions such as in drive technology.
