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Drive transformer
Control of fast MOSFETs, IGBTs and transistors
Drive transformers with two or three windings are specially designed for driving power semiconductors such as MOSFETs, IGBTs and bipolar transistors. They operate reliably in the frequency range from 20 to 200 kHz and are designed for a nominal primary current of between 0.1 and 0.6 A. The voltage-time surface is in the range of 5 to 300 µVs, which ensures efficient transmission of the control signal. Depending on the version, the transformers support working voltages from 400 to 1500 V AC. The insulation strength ranges from 440 V to 7 kV - in accordance with IEC742 and IEC950 - which enables safe galvanic isolation between the control and power circuits. The housing is made of self-extinguishing material in accordance with UL94-HB and is vacuum encapsulated to improve the electrical properties and increase the mechanical stability.
- With 2 or 3 windings
- Drive MOSFETs, IGBTs and bipolar transistors
- Nominal primary current: 0.1...0.6 A
- Voltage time domain: 5...300 µVs
- Frequency range: 20...200 kHz
- Operating voltage: 400...1500 V AC
- Insulation resistance: 440 V to 7 kV; (IEC742, IEC950)
- Self-extinguishing housing material according to UL94-HB; encapsulated under vacuum
- Can also be customized according to your specifications
With the manufacturer Sirio we offer a wide range of inductors. The inductive components are characterized by safe galvanic isolation combined with consistently high quality.
